Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates
Abstract
The creation of high efficiency and room temperature terahertz (THz) emitters has long been expected in both scientific and industrial communities. Despite the recent progress in THz source such as quantum cascade lasers, high efficiency THz emitters capable of operating at room temperature are still elusive. Indium nitride (InN), a narrow bandgap semiconductor, has emerged as a promising THz emitter due to its unique electronic properties. However, the efficiency of InN THz emitters reported up to now is still far from theoretically predicted because of inadequately engineered electrical conduction and radiative coupling. In this study, the authors report a novel, high performance THz emitting structure consisting of nanoengineered InN micro/nanopyramid arrays on a single crystal zinc oxide (ZnO) substrate. With improved electronic conduction from Zn diffusion induced doping and enhanced radiation coupling benefiting from uniquely structured geometry, the InN nanopyramids yielded THz emission intensity is close to an order of magnitude stronger than that of p-type indium arsenide (InAs). These findings prove that InN is a promising THz material and of wide importance in material science, optical engineering sectors, etc.
Additional Information
© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue online: 5 June 2017; Version of record online: 9 May 2017; Manuscript Received: 24 February 2017. H.L. and Z.C. contributed equally to this work. The authors would like to thank Dr. Y. Chen for assistance in TEM imaging. The work on the InN nanopyramid growth and THz emission is supported by National Science Foundation of China (Grant No. 11204097 and U1530120). The authors declare no conflict of interest.Attached Files
Supplemental Material - adom201700178-sup-0001-S1.pdf
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Additional details
- Eprint ID
- 77283
- DOI
- 10.1002/adom.201700178
- Resolver ID
- CaltechAUTHORS:20170509-075008247
- 11204097
- National Natural Science Foundation of China
- U1530120
- National Natural Science Foundation of China
- Created
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2017-05-09Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field