Quantum Hall Spin Diode
- Creators
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Eisenstein, J. P.
- Pfeiffer, L. N.
- West, K. W.
Abstract
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the N=1 Landau level at filling factors ν=5/2 and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.
Additional Information
© 2017 American Physical Society. Received 18 January 2017; published 4 May 2017. It is a pleasure to acknowledge helpful discussions with P. A. Lee, A. H. MacDonald, G. Refael, S. Das Sarma, and A. Stern. This work was supported in part by the Institute for Quantum Information and Matter, a NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation through Grant No. GBMF1250. The work at Princeton University was funded by the Gordon and Betty Moore Foundation through Grant No. GBMF 4420, and by the National Science Foundation MRSEC Grant No. 1420541.Attached Files
Published - PhysRevLett.118.186801.pdf
Submitted - 1701.04463.pdf
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Additional details
- Eprint ID
- 77221
- Resolver ID
- CaltechAUTHORS:20170505-110632677
- Institute for Quantum Information and Matter (IQIM)
- NSF Physics Frontiers Center
- Gordon and Betty Moore Foundation
- GBMF1250
- Gordon and Betty Moore Foundation
- GBMF4420
- NSF
- DMR-1420541
- Created
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2017-05-05Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field
- Caltech groups
- Institute for Quantum Information and Matter