Published December 1987
| Published
Book Section - Chapter
Open
Very low threshold AlGaAs/GaAs lasers grown on tilted (100) GaAs Substrates by Molecular Beam Epitaxy
- Creators
- Chen, H. Z.
- Morkoç, H.
- Yariv, A.
Abstract
The threshold current density of semiconductor lasers has seen a rapid and considerable reduction in recent years. The progress however, appeared to slow down giving rise to speculations that perhaps the fundamental limits were being approached. It is always however, very delicate to separate bottlenecks associated with the technology from the fundamental properties particularly during the development phase. In this paper, we show that threshold current densities as low as 80 A/cm^2 can be obtained in optimized graded refractive index AlGaAs/GaAs lasers with quantum well thicknesses of about 100 Å.
Additional Information
© 1987 IEEE. This work is supported by the Office of Naval Research, the Air Force Office of Scientific Research and the National Science Foundation. the authors would like to thank A. Ghaffari for the technical assistance. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.Attached Files
Published - 01487541.pdf
Files
01487541.pdf
Files
(166.2 kB)
Name | Size | Download all |
---|---|---|
md5:ad61e8c9a5f3b35c1b3173db2ebcfa6a
|
166.2 kB | Preview Download |
Additional details
- Alternative title
- Very low threshold AlGaAs/GaAs lasers grown on tilted
- Eprint ID
- 75442
- Resolver ID
- CaltechAUTHORS:20170327-152936842
- Office of Naval Research (ONR)
- Air Force Office of Scientific Research (AFOSR)
- NSF
- Strategic Defense Initiative Organization (SDIO)
- Created
-
2017-03-27Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field