Data movement in flash memories
Abstract
NAND flash memories are the most widely used non-volatile memories, and data movement is common in flash storage systems. We study data movement solutions that minimize the number of block erasures, which are very important for the efficiency and longevity of flash memories. To move data among n blocks with the help of Δ auxiliary blocks, where every block contains m pages, we present algorithms that use θ(n · min{m, log_Δ n}) erasures without the tool of coding. We prove this is almost the best possible for non-coding solutions by presenting a nearly matching lower bound. Optimal data movement can be achieved using coding, where only θ(n) erasures are needed. We present a coding-based algorithm, which has very low coding complexity, for optimal data movement. We further show the NP hardness of both coding-based and non-coding schemes when the objective is to optimize data movement on a per instance basis.
Additional Information
© 2009 IEEE. This work was supported in part by the NSF CAREER Award CCF-0747415, NSF grant ECCS-0802107, ISF grant 480/08, and Caltech Lee Center for Advanced Networking.Attached Files
Published - 05394879.pdf
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Additional details
- Eprint ID
- 75295
- Resolver ID
- CaltechAUTHORS:20170321-173656746
- NSF
- CCF-0747415
- NSF
- ECCS-0802107
- Israel Science Foundation
- 480/08
- Caltech Lee Center for Advanced Networking
- Created
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2017-03-22Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field