Published September 14, 1990
| public
Journal Article
Ammonia chemisorption on gallium arsenide clusters
Abstract
Gallium arsenide clusters in the 6–16-atom size range were generated by laser vaporization in a supersonic nozzle and trapped as positive ions in Fourier transform ion-cyclotron resonance mass spectrometer. Measurements of the rate of attachment of ammonia revealed that all clusters larger than seven atoms were most reactive near the 11 composition ratio of gallium/arsenic. The results suggest that even at this small size the clusters begin to adopt the alternating gallium—arsenic bonding arrangement characteristic of bulk GaAs crystal surfaces where gallium—arsenic bonding activates gallium atoms for ammonia chemisorption.
Additional Information
© 1990 Elsevier B.V. Received 30 April 1990, Revised 20 June 1990. This research was supported by the US Army Research Office and the Robert A. Welch Foundation, and used a cluster ET-ICR apparatus supported for general semiconductor cluster research by the Office of Naval Research, for bare metal cluster research by the US Department of Energy, and for chemisorbed cluster research by the National Science Foundation.Additional details
- Eprint ID
- 75090
- Resolver ID
- CaltechAUTHORS:20170314-102731033
- Army Research Office (ARO)
- Robert A. Welch Foundation
- Department of Energy (DOE)
- NSF
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2017-03-16Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field