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Published June 26, 1992 | public
Journal Article

Isomers of gallium arsenide cluster ions

Abstract

Gallium arsenide cluster ions were generated by laser vaporization in a supersonic nozzle, trapped in a Fourier transform ion-cyclotron resonance mass spectrometer, and allowed to react with NH_3 forming addition complexes with the cluster cations. With excess NH_3, Ga_xAs_y(NH_3)^+_z with the same GaAs composition (x+y) was observed with several values of z. This observation of different numbers of chemisorbed NH_3 molecules at completion is explained in terms of the existence of multiple isomers of positive GaAs clusters. Negative Ga_xAs^−_y clusters were found to be inert toward NH_3.

Additional Information

© 1992 Elsevier B.V. Received 30 January 1992, Revised 2 April 1992. This research was supported by the US Army Research Office and the Robert A. Welch Foundation, and used a cluster FT-ICR apparatus supported for general semiconductor cluster research by the Office of Naval Research, for bare metal cluster research by the US Department of Energy, and for chemisorbed cluster research by the National Science Foundation.

Additional details

Created:
August 20, 2023
Modified:
October 25, 2023