A terahertz imaging receiver in µm SiGe BiCMOS technology

Abstract

This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or post-processing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.

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