Published January 23, 2017
| Submitted
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Measurement of some transistor parameters
- Creators
- Barna, Arpad
Abstract
Design of transistor circuits, particularly those operating in the nanosecond time range necessitated the measurement of some transistor parameters usually not specified by the manufacturers. Collector to base capacitance, gain-bandwidth product, beta and base spreading resistance of the transistors of Table 1 were measured.
Additional Information
© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68.Attached Files
Submitted - TR000519.pdf
Files
TR000519.pdf
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Additional details
- Eprint ID
- 73605
- DOI
- 10.7907/Z93R0QVM
- Resolver ID
- CaltechAUTHORS:20170123-071425828
- AT(11-1)-68
- U.S. Atomic Energy Commission
- Created
-
2017-01-23Created from EPrint's datestamp field
- Updated
-
2019-10-03Created from EPrint's last_modified field
- Caltech groups
- Synchrotron Laboratory
- Series Name
- Synchrotron Laboratory
- Series Volume or Issue Number
- CTSL-23
- Other Numbering System Name
- CTSL
- Other Numbering System Identifier
- 23