Published February 1961
| Submitted
Technical Report
Open
A 50 nanosecond linear gate circuit using transistors
- Creators
- Barna, Arpad
- Marshall, J. Howard
Chicago
An error occurred while generating the citation.
Abstract
In the past, linear gate circuits for gating pulses of photomultiplier tubes have been mostly based on semiconductor diodes. Using diffused base transistors as a gate in an emitter input configuration provides favorable linearity and feedthrough properties. The circuit described here is an improved version of one developed by A. V. Tollestrup.
Additional Information
© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68. The valuable comments and suggestions of M. Sands and A. V. Tollestrup are gratefully acknowledged.Attached Files
Submitted - TR000515.pdf
Files
TR000515.pdf
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(4.9 MB)
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Additional details
- Eprint ID
- 73326
- DOI
- 10.7907/Z9SF2T66
- Resolver ID
- CaltechAUTHORS:20170109-092857597
- U.S. Atomic Energy Commission
- ΑΤ-(11-1)- 68
- Created
-
2017-01-09Created from EPrint's datestamp field
- Updated
-
2019-10-03Created from EPrint's last_modified field
- Caltech groups
- Synchrotron Laboratory
- Series Name
- Synchrotron Laboratory
- Series Volume or Issue Number
- CTSL-18
- Other Numbering System Name
- CTSL
- Other Numbering System Identifier
- 18