Published January 9, 2017
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A 50 nanosecond linear gate circuit using transistors
- Creators
- Barna, Arpad
- Marshall, J. Howard
Abstract
In the past, linear gate circuits for gating pulses of photomultiplier tubes have been mostly based on semiconductor diodes. Using diffused base transistors as a gate in an emitter input configuration provides favorable linearity and feedthrough properties. The circuit described here is an improved version of one developed by A. V. Tollestrup.
Additional Information
© 1961 California Institute of Technology. Supported in part by the U.S. Atomic Energy Commission Contract No. ΑΤ(11-1)-68. The valuable comments and suggestions of M. Sands and A. V. Tollestrup are gratefully acknowledged.Attached Files
Submitted - TR000515.pdf
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TR000515.pdf
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Additional details
- Eprint ID
- 73326
- DOI
- 10.7907/Z9SF2T66
- Resolver ID
- CaltechAUTHORS:20170109-092857597
- ΑΤ-(11-1)- 68
- U.S. Atomic Energy Commission
- Created
-
2017-01-09Created from EPrint's datestamp field
- Updated
-
2019-10-03Created from EPrint's last_modified field
- Caltech groups
- Synchrotron Laboratory
- Series Name
- Synchrotron Laboratory
- Series Volume or Issue Number
- CTSL-18
- Other Numbering System Name
- CTSL
- Other Numbering System Identifier
- 18