Published June 2016
| public
Book Section - Chapter
Cu_2O photovoltaic devices incorporating Zn(O,S) buffer layers
Abstract
Cu_2O is a semiconductor composed of earth — abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu_2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu_2O solar cell incorporating a Zn(O,S) window layer. We demonstrate that deposition of Zn(O,S) at elevated temperature limits formation of ZnSO_4 and increases the current that can be collected from the cell by 54%.
Additional Information
© 2016 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project as well as the Quantum Energy and Sustainable Solar Technologies (QESST), an NSF-DOE research center.Additional details
- Eprint ID
- 72336
- Resolver ID
- CaltechAUTHORS:20161128-145849058
- Dow Chemical Company
- NSF
- Department of Energy (DOE)
- Created
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2016-11-28Created from EPrint's datestamp field
- Updated
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2021-11-11Created from EPrint's last_modified field