Published June 2016
| public
Book Section - Chapter
A 10Gb/s, 342fJ/bit Micro-Ring Modulator Transmitter with Switched-Capacitor Pre-Emphasis and Monolithic Temperature Sensor in 65nm CMOS
- Creators
- Saeedi, Saman
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Emami, Azita
Chicago
Abstract
In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.
Additional Information
© 2016 IEEE. Date Added to IEEE Xplore: 22 September 2016. The authors would like to acknowledge ST Microelectronics for CMOS chip fabrication and OpSIS for SiP chip fabrication.Additional details
- Eprint ID
- 70836
- DOI
- 10.1109/VLSIC.2016.7573541
- Resolver ID
- CaltechAUTHORS:20161004-140125731
- Created
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2016-10-04Created from EPrint's datestamp field
- Updated
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2023-03-15Created from EPrint's last_modified field