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Published June 2016 | public
Book Section - Chapter

A 10Gb/s, 342fJ/bit Micro-Ring Modulator Transmitter with Switched-Capacitor Pre-Emphasis and Monolithic Temperature Sensor in 65nm CMOS

Abstract

In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.

Additional Information

© 2016 IEEE. Date Added to IEEE Xplore: 22 September 2016. The authors would like to acknowledge ST Microelectronics for CMOS chip fabrication and OpSIS for SiP chip fabrication.

Additional details

Created:
August 20, 2023
Modified:
October 20, 2023