Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics
Abstract
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
Additional Information
© 2016 American Chemical Society. Publication Date (Web): August 26, 2016. Received: May 11, 2016. Revised: August 23, 2016. This work is part of the "Light-Material Interactions in Energy Conversion" Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001293. D.J., A.R.D., and M.C.S. acknowledge additional support from Resnick Sustainability Institute Graduate and Postdoctoral Fellowships. A.R.D. also acknowledges support in part from the Kavli Nanoscience Institute Postdoctoral Fellowship. G.T. acknowledges support in part from the Swiss National Science Foundation, Early Postdoc Mobility Fellowship n.P2EZP2_159101. J.W. acknowledges support from the National Science Foundation Graduate Research Fellowship under Grant No. 1144469. Author Contributions: D.J. prepared the samples and fabricated the devices. A.R.D. performed all the calculations. D.J., G.T., and J.W. performed the electrical and photocurrent measurements. M.C.S. assisted with sample preparation and fabrication. H.A.A. supervised over all the experiments, calculations, and data collection. All authors contributed to data interpretation, presentation, and writing of the manuscript. The authors declare no competing financial interest.Attached Files
Submitted - 1605.04057.pdf
Supplemental Material - nl6b01914_si_001.pdf
Files
Name | Size | Download all |
---|---|---|
md5:db219fa99c8e3ca2af53540d23e8cdb7
|
1.9 MB | Preview Download |
md5:2679a6f665656281c643d6730a8fdde3
|
839.6 kB | Preview Download |
Additional details
- Eprint ID
- 70195
- Resolver ID
- CaltechAUTHORS:20160907-121115025
- Department of Energy (DOE)
- DE-SC0001293
- Kavli Nanoscience Institute
- Swiss National Science Foundation (SNSF)
- P2EZP2_159101
- NSF Graduate Research Fellowship
- 1144469
- Resnick Sustainability Institute
- Created
-
2016-09-07Created from EPrint's datestamp field
- Updated
-
2021-11-11Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute, Resnick Sustainability Institute