Wafer-Size and Single-Crystal MoSe_2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

Creators: Chen, Zuxin; Liu, Huiqiang; Chen, Xuechen; Chu, Guang; Chu, Sheng; Zhang, Hang

Abstract

Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe_2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe_2 films were less than three atomic layers thick and were single crystalline of MoSe_2 over the entire GaN substrate. The ultrathin MoSe_2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.

Additional Information

© 2016 American Chemical Society. Received: April 21, 2016; Accepted: July 13, 2016; Published: July 13, 2016. The authors would like to thank Dr. Y. Chen for assistance in TEM imaging. The work was supported by National Science Foundation of China (grant no. 11204097 and U1530120). Author Contributions: S. C. and H. Z. conceived and designed the experiments. Z. C., H. L., and X. C did the MoSe_2 film growth. Z. C., H. L., and G. C. carried out the characterization experiments. S. C. and G. C. cowrote the paper. Z. C., H. L., and X. C. contributed equally to this work. All authors contributed to analyzing and reviewing the data in this manuscript. Z. Chen, H. Liu, and X. Chen contributed equally. The authors declare no competing financial interest.

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