Thermal Characterization of Substrate Options for High-Power THz Multipliers Over a Broad Temperature Range
Abstract
This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.
Additional Information
© 2015 IEEE. Manuscript received September 07, 2015; revised November 30, 2015; accepted December 15, 2015. Date of publication January 12, 2016; date of current version March 21, 2016. The work was carried out at the Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA under a contract with the National Aeronautics and Space Administration (NASA). The authors would like to thank Prof. S. Weinreb, California Institute of Technology (Caltech), for interesting discussions on the topic.Additional details
- Eprint ID
- 68803
- Resolver ID
- CaltechAUTHORS:20160701-093607086
- Academy of Finland
- NASA/JPL/Caltech
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2016-07-06Created from EPrint's datestamp field
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2021-11-11Created from EPrint's last_modified field