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Published September 2011 | Published
Journal Article Open

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Abstract

We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

Additional Information

U.S. Government work not protected by U.S. copyright. This work was carried out in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. This research was also supported in part by the W. M. Keck Institute for Space Studies. The author would like to thank numerous colleagues for helpful discussions, providing of material and data for this work and for their excellent contributions to the field. These include C. Bolognesi, E. Bryerton, G. Chattopadhyay, S. Church, K. Cleary, D. Dawson, W. Deal, H. Eisele, A. Fung, T. Gaier, Z. Griffith, J. Hacker, V. Jain, P. Kangaslahti, R. Lai, C. Lawrence, I. Mehdi, K. Leong, Y. C. Leong, G. Mei, M. Micovic, M. Morgan, H. Owen, A. Peralta, D. Pukala, G. Rebeiz, V. Radisic, R. Reeves, M. Rodwell, S. Sarkozy, P. Siegel, M. Sieth, M. Soria, A. Tessmann, S. Weinreb, M. Urteaga, M. Varonen, S. Voinigescu, and P. Voll.

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August 19, 2023
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October 17, 2023