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Published June 2016 | Submitted
Journal Article Open

Nanoscale strain engineering of graphene and graphene-based devices

Abstract

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

Additional Information

© 2016 The Chinese Society of Theoretical and Applied Mechanics; Institute of Mechanics, Chinese Academy of Sciences and Springer-Verlag Berlin Heidelberg. Received: 16 July 2015. Revised: 31 August 2015. Accepted: 2 November 2015. First online: 07 February 2016. This project was jointly supported by the National Science Foundation under the Institute for Quantum Information and Matter at California Institute of Technology, a grant from the Northrup Grumman Cooperation, and a gift from Mr. Lewis van Amerongen.

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August 22, 2023
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