Balanced Modulation for Nonvolatile Memories
Abstract
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When reading information from a block, it adjusts the reading threshold such that the resulting word is also balanced or approximately balanced. Balanced modulation has suboptimal performance for any cell-level distribution and it can be easily implemented in the current systems of nonvolatile memories. Furthermore, we studied the construction of balanced error-correcting codes, in particular, balanced LDPC codes. It has very efficient encoding and decoding algorithms, and it is more efficient than prior construction of balanced error-correcting codes.
Additional Information
Submitted on 4 Sep 2012. This work was supported in part by the NSF CAREER Award CCF-0747415, the NSF grant ECCS-0802107, and by an NSF-NRI award. This paper was presented in part at IEEE International Symposium on Information Theory (ISIT), St. Petersburg, Russia, August 2011.Attached Files
Submitted - 1209.0744.pdf
Files
| Name | Size | Download all |
|---|---|---|
|
md5:d4921e3a418d5a6ec5ee393d4ea158f7
|
528.7 kB | Preview Download |
Additional details
- Eprint ID
- 63790
- Resolver ID
- CaltechAUTHORS:20160120-083936607
- NSF
- CCF- 0747415
- NSF
- ECCS-0802107
- Created
-
2016-01-20Created from EPrint's datestamp field
- Updated
-
2023-06-02Created from EPrint's last_modified field