Published June 2015
| public
Book Section - Chapter
Fabrication and Characterization of ZnSn_xGe_(1-x)N_2 Alloys for Light Absorbers
Abstract
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSn_xGe_(1-x)N_2. The sputtered thin-films show potential for ZnSn_xGe_(1-x)N_2 to be tunable semiconductor photovoltaic absorber materials.
Additional Information
© 2015 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project. We also thank the Joint Center for Artificial Photosynthesis and the Molecular Materials Research Center at Caltech for instrument access.Additional details
- Alternative title
- Fabrication and Characterization of ZnSnxGe1-xN2 Alloys for Light
- Eprint ID
- 63187
- DOI
- 10.1109/PVSC.2015.7355918
- Resolver ID
- CaltechAUTHORS:20151223-115056420
- Dow Chemical Company
- Created
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2015-12-23Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field