Published June 2015
| public
Book Section - Chapter
Molecular Beam Epitaxy of Cu_2O Heterostructures for Photovoltaics
Chicago
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Abstract
Cu_2O is a p-type semiconductor that has demonstrated attractive photovoltaic properties, but its efficiencies have been limited by surface instability and lack of high quality thin films. In this work, plasma-assisted molecular beam epitaxy is used to precisely control film orientation and interface chemistry of Cu_2O heterostructures. Thin films of Cu_2O are deposited by MBE onto thin films of Pt and Au sputtered on MgO single crystal substrates. This heterostructure configuration provides a path for an all-epitaxial thin film Cu_2O solar cell, which can serve as a top cell in a tandem structure with a crystalline Si bottom cell.
Additional Information
© 2015 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project.Additional details
- Alternative title
- Molecular Beam Epitaxy of Cu2O Heterostructures for Photovoltaics
- Eprint ID
- 63186
- DOI
- 10.1109/PVSC.2015.7355913
- Resolver ID
- CaltechAUTHORS:20151223-114554576
- Dow Chemical Company
- Created
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2015-12-23Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field
- Caltech groups
- JCAP