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Published January 8, 2016 | Supplemental Material
Journal Article Open

Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Abstract

Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally-friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZT_(dev), and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Herein, we report a record high ZT_(dev) ∼1.34, with ZT ranging from 0.7 to 2.0 at 300-773K, realized in hole doped SnSe crystals. The exceptional performance arises from the ultra-high power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.

Additional Information

© 2015 American Association for the Advancement of Science. Received 3 September 2015; accepted 12 November 2015. Published online 26 November 2015. This work was supported in part by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences under Award Numbers DE-SC0014520 (GJT, HC, VPD, SQH, CW and MGK), EFRC grant DE-SC0001054 (CU) and S3TEC-EFRC grant # DE-SC0001299 (GJS). This work was also supported by the "Zhuoyue" Program from Beihang University and the Recruitment Program for Young Professionals and NSFC under Grant No. 51571007 (LDZ, YLP, SKG and HBX). The synthesis, characterization, transport measurements and DFT calculations were supported by DE-SC0014520. The validation measurements were supported by DE-SC0001299. Measurements at University of Michigan (CU) were supported by DE-SC0001054. All the data in the main text and the supplementary materials are available online: www.sciencemag.org.

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August 20, 2023
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