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Published July 1, 2003 | Published
Patent Open

Aerosol silicon nanoparticles for use in semiconductor device fabrication

Abstract

A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably single crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 10.sup.12 to 10.sup.13 particles/cm.sup.2. A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less than 10.sup.11 atoms/cm.sup.2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behavior and long-term non-volatility.

Additional Information

Publication number US6586785B2. Publication type Grant. Publication date July 1, 2003. Application number US 09/895,790. Filing date June 29, 2001. Priority date June 29, 2000. Government Interests: STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT. The U.S. Government has certain rights in this invention pursuant to grant DMR-9871850 awarded by the National Science Foundation. Parent Case Text: RELATED APPLICATIONS. This application claims priority of U.S. provisional application serial No. 60/215,390, entitled AEROSOL PROCESS FOR FABRICATING DISCONTINUOUS FLOATING GATE MICROELECTRONIC DEVICES, filed on Jun. 29, 2000, and U.S. provisional application serial No. 60/215,400, entitled DISCONTINUOUS FLOATING GATE INCORPORATING AEROSOL NANOPARTICLES, filed on Jun. 29, 2000. Parent Case Text: RELATED APPLICATIONS. This application is related to U.S. application Ser. No. 06/215,390, entitled AEROSOL PROCESS FOR FABRICATING DISCONTINUOUS FLOATING GATE MICROELECTRONIC DEVICES, filed on Jun. 29, 2001.

Attached Files

Published - US20020074565.pdf

Published - US6586785B2.pdf

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Additional details

Created:
August 19, 2023
Modified:
October 23, 2023