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Published November 1978 | public
Journal Article

Depth profiling of implanted neon with resonant nuclear reactions

Abstract

A resonance in the ^(20)Ne(p, γ)^(21)Na reaction at a proton energy of 1169 keV has been investigated for its usefulness in quantitatively determining neon concentration as a function of depth in a solid substrate. Depth profiles of neon implanted in tantalum and silicon have been obtained by measuring prompt γ-ray yields with both Nal(T1) detectors and large volume Ge(Li) detectors. Neon profiles were also obtained by measuring the delayed ^(21)Na positron activity. The efficacy of the various measurement techniques is discussed. The method seems sufficiently sensitive that neon concentrations of 10^(20)/cm^3 are measurable in favourable host materials. Additional alternative nuclear techniques for profiling neon are suggested.

Additional Information

© 1978 North-Holland Publishing Company. Received 10 March 1978, Available online 26 February 2003. Supported in part by the National Science Foundation (PHY76-83685) at Caltech. We would like to thank Professors J.W. Mayer and M. Nicolet for the hospitality of their laboratory in which the implantations were performed and also for their interest and encouragement during the work. We would like to thank Professor T.A. Tombrello, Professor R.W. Kavanagh, S. Matteson, H. Wilson, J. Griffith, C. Fillieux and P. Haff at Caltech for their many suggestions, comments, calculations and assistance during this experiment. One of us (ZES) is grateful to B. Szymanski, P. Menon and C. Ryan at Melbourne for assistance during the running of the Pelletron accelerator, and acknowledges the support of a Queen Elizabeth II Fellowship.

Additional details

Created:
August 19, 2023
Modified:
October 24, 2023