Published 1966
| Updated
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Electron Transport in Thin Insulating Films
- Creators
-
Mead, C. A.
- Others:
- Niedermayer, R.
- Mayer, H.
Chicago
Abstract
Experiments on the electron transport through thin insulating barriers have been performed with diodes of Ta-Ta_2O_5-Au, Ta-Ta_2O_5-Al, Ta-Ta_2O_5-Bi, Zn-ZnO-Au, Al-Al_2O_3-Al and Al-Al_2O_3-Au. The analysis of the dependence of current on temperature and film thickness allows a distinction of two cases: imperfect and perfect dielectrics. In the former case the mechanism for electron transport is field ionisation of trap-type states at low temperatures and thermal ionisation of this states at higher temperatures. In the latter case Schottky-Emission and field emission have been observed.
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©1966 Vandenhoeck & Ruprecht. Invited review paper.Attached Files
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- 60039
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- CaltechAUTHORS:20150902-160503489
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