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Published August 15, 1969 | Published
Journal Article Open

Tunneling in CdTe Schottky Barriers

Abstract

The tunneling characteristics of metal contacts on n−CdTe have been measured. Both the forward- and reverse-bias characteristics are in good agreement with the two-band model for the energy-complex-momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low levels by providing a two-step transition. The slope of the forward-bias log_e J−versus−V curves for tunneling through the intermediate states was reduced by a factor of 2.

Additional Information

© 1969 American Physical Society. We wish to thank L. van Atta, G. Picus, and N. Kyle of the Hughes Research Laboratories for supplying the CdTe used in this work. The work was supported in part by the Office of Naval Research.

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Published - PhysRev.184.780.pdf

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August 19, 2023
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March 5, 2024