Published July 1968
| public
Journal Article
Electrical conduction through thin amorphous SiC films
- Creators
- Hartman, T. E.
- Blair, J. C.
-
Mead, C. A.
Chicago
Abstract
The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)V^nn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators.
Additional Information
© 1968 Elsevier. Received January 22, 1968. Presented in part at the Cleveland meeting of the Electrochemical Society, May 1966.Additional details
- Eprint ID
- 60013
- DOI
- 10.1016/0040-6090(68)90014-X
- Resolver ID
- CaltechAUTHORS:20150901-120328599
- Created
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2015-09-01Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field