Published June 1, 1973
| public
Journal Article
Crystal Growth of Silicon and Germanium in Metal Films
Chicago
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Abstract
Amorphous silicon in contact with silver films and amorphous germanium in contact with aluminum films form crystalline precipitates when heated to temperatures well below those at which any liquid phase is present. Crystallization occurs by an initial dissolution of the semiconductor into the metal film solvent followed by the growth of crystals out of the solvent.
Additional Information
© 1973 American Association for the Advancement of Science. Received 15 January 1973. We thank J. Devaney of the Jet Propulsion Laboratory for carrying out the scanning electron microscopy and H. J. Amel and R. Villagrana for carrying out the electron diffraction measurements. The work was supported in part by the Office of Naval Research.Additional details
- Eprint ID
- 59461
- DOI
- 10.1126/science.180.4089.948
- Resolver ID
- CaltechAUTHORS:20150812-150608307
- Office of Naval Research (ONR)
- Created
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2015-08-12Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field