Published September 2015
| public
Journal Article
An integrated optical hydrogen sensor on a silicon-on-insulator platform: Effects of palladium film thickness
Abstract
In this paper, we present the design and experimental demonstration of a silicon-on-insulator based optical hydrogen sensor. We analyze the response time, hysteresis and sensitivity of our device for various palladium film thicknesses. For a 1-nm thick palladium film the response time is approximately 6 s and the sensor suffers little from hysteresis effect. These attractive features make the sensor highly useful for a wide range of applications.
Additional Information
© 2015 Published by Elsevier B.V. Received 18 November 2014; Received in revised form 23 March 2015; Accepted 28 March 2015; Available online 14 April 2015. We would like to acknowledge Professor Glenn D. Hibbard of the Department of Materials Science and Engineering for useful advice, and Dr. Pulin Mondal of the Department of Civil Engineering of theUniversity of Toronto for his help in developing the experimental setup. We also thank NSERC for financial support through its CREATE Training Program.Additional details
- Eprint ID
- 58600
- DOI
- 10.1016/j.snb.2015.03.084
- Resolver ID
- CaltechAUTHORS:20150625-105828969
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Created
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2015-06-25Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field