Published March 1995
| Published
Journal Article
Open
Plasma enhanced chemical vapor deposition of SiO_2 using novel alkoxysilane precursors
Abstract
This communication describes our results using these novel alkoxysilane precursors for PECVD of SiO_2 films in an inductively coupled rf plasma reactor. The effects of deposition time, rf power, and organosilane pressure on the films' characteristics are described.
Additional Information
© 1995 American Vacuum Society. (Received 10 November 1994; accepted 10 December 1994) The support of the National Science Foundation under Grant No. DMR-9409272, Sandia National Laboratories under Contract No. AJ-3848 and Colorado State University through the Faculty Diversity Career Enhancement Fund and Faculty Research Grants is gratefully acknowledged.Attached Files
Published - 1.579382.pdf
Files
1.579382.pdf
Files
(463.6 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:8cb86c59a34ea60d629ce56cca2134ea
|
463.6 kB | Preview Download |
Additional details
- Alternative title
- Plasma enhanced chemical vapor deposition of SiO2 using novel alkoxysilane precursors
- Eprint ID
- 58418
- Resolver ID
- CaltechAUTHORS:20150622-144457314
- DMR-9409272
- NSF
- AJ-3848
- Sandia National Laboratories
- Colorado State University
- Created
-
2015-06-22Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field