Theory and observation on non-linear effects limiting the coherence properties of high-Q hybrid Si/III-V lasers
Abstract
Hybrid Si/III-V is a promising platform for semiconductor narrow-linewidth lasers, since light can be efficiently stored in low loss silicon and amplified in III-V materials. The introduction of a high-Q cavity in silicon as an integral part of the laser's resonator leads to major reduction of the laser linewidth. However, the large intra-cavity field intensity resulting from the high-Q operation gives rise to non-linear effects. We present a theoretical model based on non-linear rate equations to study the effect of two-photon absorption and induced free-carrier absorption in silicon on the laser's performance. The predictions from this model are compared to the experimental results obtained from narrow-linewidth lasers fabricated by us. It is shown to have an effect on the linearity of the L-I curve, and to reduce the achievable Schawlow- Townes linewidth.
Additional Information
© 2015 SPIE. This work was supported in part by the Defense Advanced Research Projects Agency and the Army Research Office. The authors would like to thank the Kavli Nanoscience Institute at the California Institute of Technology for providing technical and fabrication infrastructure.Attached Files
Published - Vilenchik_2015p93820N.pdf
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Additional details
- Eprint ID
- 57985
- Resolver ID
- CaltechAUTHORS:20150603-130137484
- Defense Advanced Research Projects Agency (DARPA)
- Army Research Office (ARO)
- Created
-
2015-06-03Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 9382