Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation
Abstract
High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI). Therefore, costly EMI filters or shielding is normally demanded on the load and supply sides. An S-shaped voltage transient with a high-order time derivative eliminates the discontinuity in the switching transient and can suppress high-frequency spectrum of EMI emissions. More importantly, it provides an improved tradeoff between EMI generation and switching time, therefore switching losses. This promising tradeoff can be explored further for better high-frequency EMI suppression by using the infinitely differentiable characteristics of Gaussian S-shaped transients. However, current gate drive schemes cannot achieve the S shaping. In this paper, active voltage control is applied and improved successfully to define IGBT switching dynamics with a smoothed Gaussian waveform.
Additional Information
© 2014 IEEE. Date of Publication: 13 August 2014. Manuscript received November 25, 2013; revised May 19, 2014; accepted August 1, 2014. Date of publication August 13, 2014; date of current version March 17, 2015. Paper 2013-IPCC-934.R1, presented at the 2013 IEEE Energy Conversion Congress and Exposition, Denver, CO, USA, September 16–20, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Industrial Power Converter Committee of the IEEE Industry Applications Society. The work of X. Yang was supported by the Cambridge Overseas Trust and the Henry Lester Trust. The authors would like to thank Fuji Electric Company Ltd. for the generous supply of IGBT modules and Dr. M. Otsuki for his precious suggestion.Additional details
- Eprint ID
- 56924
- DOI
- 10.1109/TIA.2014.2347578
- Resolver ID
- CaltechAUTHORS:20150423-132834912
- Cambridge Overseas Trust
- Henry Lester Trust
- Fuji Electric Company Ltd.
- Created
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2015-04-23Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field