Amorphization and recrystallization in MeV ion implanted InP crystals
Abstract
A comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained.
Additional Information
© 1988 Materials Research Society. Supported in part by National Science Foundation [DMR-21119]. The authors greatly acknowledge Prof. M-A. Nicolet for his valuable discussion on the CRBS analysis, and Carol Garland for her assistance on the TEM work.Attached Files
Published - Amorphization_and_Recrystallization_in_MeV_Ion.pdf
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Additional details
- Eprint ID
- 56052
- Resolver ID
- CaltechAUTHORS:20150325-075224816
- NSF
- DMR-21119
- Created
-
2015-03-25Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Series Name
- Materials Research Society symposia proceedings
- Series Volume or Issue Number
- 100