Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes
- Creators
- Gosavi, Shachi
- Gao, Yi Qin
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Marcus, R. A.
Abstract
The temperature dependence of the electronic contribution to the nonadiabatic electron transfer rate constant (k_(ET)) at metal electrodes is discussed. It is found in these calculations that this contribution is proportional to the absolute temperature T. A simple interpretation is given. We also consider the nonadiabatic rate constant for electron transfer at a semiconductor electrode. Under conditions for the maximum rate constant, the electronic contribution is also estimated to be proportional to T, but for different reasons than in the case of metals (Boltzmann statistics and transfer at the conduction band edge for the semiconductor versus Fermi–Dirac statistics and transfer at the Fermi level, which is far from the band edge, of the metal).
Additional Information
© 2001 Elsevier Science B.V. Received 14 September 2000; received in revised form 23 October 2000; accepted 24 October 2000. We are pleased to acknowledge discussions with Professors Harry Finklea and Nate Lewis, who called our attention to this question for metals and semiconductors, respectively. It is a pleasure to acknowledge the support of this research by the Office of Naval Research and the National Science Foundation, and to dedicate this article to Professor Roger Parsons. As one of us mentioned in an earlier article honoring Roger, RAM is very much indebted to him for the illuminating chapter he wrote many decades ago in Modern Aspects of Electrochemistry. This chapter facilitated considerably RAM's entry into the field of electron transfer in electrochemistry.Additional details
- Eprint ID
- 55840
- Resolver ID
- CaltechAUTHORS:20150317-094130275
- Office of Naval Research (ONR)
- NSF
- Created
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2015-03-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field