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Published August 1969 | public
Journal Article

Surface barriers on layer semiconductors: GaS, GaSe, GaTe

Abstract

Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds.

Additional Information

© 1969 Pergamon Press. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.

Additional details

Created:
August 19, 2023
Modified:
March 5, 2024