Published August 1969
| public
Journal Article
Surface barriers on layer semiconductors: GaS, GaSe, GaTe
- Creators
- Kurtin, Stephen
-
Mead, C. A.
Chicago
Abstract
Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds.
Additional Information
© 1969 Pergamon Press. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.Additional details
- Eprint ID
- 55652
- DOI
- 10.1016/0022-3697(69)90179-6
- Resolver ID
- CaltechAUTHORS:20150309-153629367
- Office of Naval Research (ONR)
- JPL
- Created
-
2015-03-10Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field