Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published January 1968 | public
Journal Article

Impurity Effects on Basal Slip in Zinc Single Crystals

Abstract

The basal stress-strain behavior, dislocation density, and strain rate sensitivity of the flow stress were measured at room temperature on single crystals of zone-refined zinc, 99.999 pct Zn, and zinc containing 0.0025 and 0.02 wt pct Al. No significant change in the strain rate sensitivity of the flow stress occurs with the addition of aluminum. Changes in dislocation substructure and nonbasal dislocation density were observed with the addition of aluminum. The effect of aluminum on the basal stress-strain behavior is explained in terms of changes in nonbasal dislocation density which determines the separation distance of junctions between basal and nonbasal dislocations. The onset of basal slip is associated with the breaking of attractive junctions. The change in basal dislocation density was found to be proportional to the one-third power of the plastic shear strain, independent of purity.

Additional Information

© 1968 American Institute of Mining, Metallurgical, and Petroleum Engineers. Manuscript submitted May 29, 1967. This work was sponsored by the U.S. Atomic Energy Commission under Contract No. AT(04-3)-473. The authors wish to express their appreciation to the U.S. Atomic Energy Commission for sponsorship of this work under Contract No. AT(04-3)-473, and to Professor D. S. Wood for his advice and encouragement during the course of this work. The invaluable assistance of A. P. L. Turner and R. C. Blish in specimen preparation, testing, and data analysis is gratefully acknowledged. Edward R.Buchanan and Robert E. Reed-Hill, Discussion of "Impurity Effects on Basal Slip in Zinc Single Crystals", Transactions of the Metallurgical Society of AIME, 242:2022-2024, September 1968.

Additional details

Created:
August 19, 2023
Modified:
October 20, 2023