Published 1988
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Formation of Buried Oxide in MeV Oxygen Implanted Silicon
Chicago
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Abstract
We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10^(18)/cm^2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO_2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO_2.
Additional Information
© 1988 Materials Research Society. This work was supported in part by the NSF grant [DMR-8421119].Attached Files
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Additional details
- Eprint ID
- 54724
- Resolver ID
- CaltechAUTHORS:20150211-120450224
- NSF
- DMR-8421119
- Created
-
2015-02-11Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Series Name
- Materials Research Society symposia proceedings
- Series Volume or Issue Number
- 107