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Published 1988 | Published
Book Section - Chapter Open

Formation of Buried Oxide in MeV Oxygen Implanted Silicon

Abstract

We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10^(18)/cm^2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO_2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO_2.

Additional Information

© 1988 Materials Research Society. This work was supported in part by the NSF grant [DMR-8421119].

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Created:
August 19, 2023
Modified:
January 13, 2024