Published 1984
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Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices
- Others:
- Gibson, J. M.
- Dawson, L. R.
Chicago
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Abstract
Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 10^(15) cm^(−2), no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 10^(12) cm^(−2). Interpretation of the rocking curves suggests that low-dose implantations release strain in the Al_xGa_(1−x) As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible.
Additional Information
© 1985 Materials Research Society. The authors thank Y. C. M. Yeh, D. A. Smith, and A. Mehta at Applied Solar Energy Corporation for supplying the as-grown samples. Partial financial support by the Office of Naval Research under contract N00014-84-C-0736 through Rockwell International is acknowledged as well.Attached Files
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Additional details
- Eprint ID
- 54501
- Resolver ID
- CaltechAUTHORS:20150206-151636897
- Office of Naval Research (ONR)
- N00014-84-C-0736
- Rockwell International
- Created
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2015-02-06Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field
- Series Name
- Materials Research Society symposia proceedings
- Series Volume or Issue Number
- 37