Conduction Band Minima in AlAs and AlSb
- Creators
-
Mead, C. A.
- Spitzer, W. G.
Abstract
The photoresponse of surface barrier rectifiers made by evaporating a metal such as gold or platinum on a cleaved surface of AlAs and AlSb has been measured in the front wall configuration. The photoresponse of such units for hv > E_g, where E_g is the energy gap, will be proportional to the absorption coefficient as long as the optical attenuation length is large compared to both the width of the space-charge region and the minority carrier diffusion length. The analysis is essentially the same as that for p-n junctions with the exception that the barrier is at the surface and hence more sensitive to photons of high absorption coefficient. Photoinjection of carriers from the metal into the semiconductor for photon energies where hv < E_g can also be observed.
Additional Information
© 1963 American Physical Society. Received 19 August 1963. The authors are indebted to Derek Bolger of Standard Telecommunication Laboratories for supplying the AlAs, and H. M. Simpson for fabrication of the units. The work was supported in part by the U. S. Office of Naval Research and the International Telephone and Telegraph Corporation.Attached Files
Published - PhysRevLett.11.358.pdf
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Additional details
- Eprint ID
- 54257
- Resolver ID
- CaltechAUTHORS:20150130-151553668
- Office of Naval Research (ONR)
- International Telephone and Telegraph Corporation
- Created
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2015-01-31Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field