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Published February 1964 | Published
Journal Article Open

Conduction Band Minima of Ga(As_(1−x)P_x)

Abstract

Photoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been measured. Thresholds corresponding to both direct and indirect band-to-band excitations within the semiconductor and also photoinjection from the metal have been identified. The threshold of the direct transition varies with composition from 1.37 eV in GaAs to 2.65 eV in GaP. The indirect transition was followed for x≳0.38 and again varied linearly from 2.2 eV in GaP to an extrapolated value in 1.62 eV in GaAs. The energy separation of the two conduction band minima in GaAs is in disagreement with previously reported values.

Additional Information

© 1964 American Physical Society. Received 21 August 1963. This work was supported in part by the U. S. Office of Naval Research under contract NONR 220(42) and the International Telephone and Telegraph Corporation.

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Published - PhysRev.133.A872.pdf

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Created:
August 19, 2023
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