Published March 1972
| Updated + Published
Journal Article
Open
Current-voltage characteristics of small size MOS transistors
- Creators
- Hoeneisen, B.
-
Mead, C. A.
Chicago
An error occurred while generating the citation.
Abstract
One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.
Additional Information
© 1972 IEEE. Manuscript received August 16, 1971.Attached Files
Published - 01476899.pdf
Updated - Current-VoltageCharacteristicsofSmallSizeMOSTransistors.pdf
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01476899.pdf
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Additional details
- Eprint ID
- 54101
- Resolver ID
- CaltechAUTHORS:20150126-163955527
- Created
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2015-01-27Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field