Published September 1968
| Published
Journal Article
Open
GaSe Schottky barrier gate FET
- Creators
- Kurtin, Stephen
-
Mead, C. A.
Abstract
Advantages of the Schottky barrier gate technique are reviewed, and an experimental field-effect transistor constructed from p-type GaSe is discussed. Device characteristics are consistent with calculations based on material parameters and the geometry employed.
Additional Information
© 1968 IEEE. manuscript received May 8, 1968; revised May 27, 1968. This work was supported in part by the Office of Naval Research.Attached Files
Published - 01448588.pdf
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01448588.pdf
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Additional details
- Eprint ID
- 54100
- Resolver ID
- CaltechAUTHORS:20150126-163615311
- Office of Naval Research (ONR)
- Created
-
2015-01-27Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field