Published February 1974
| Submitted
Journal Article
Open
Observations of dislocations in zinc by chemical etching
Abstract
A new chemical etch has been found to be effective for revealing dislocations intersecting the basal planes of zinc. The etch works for surface whose orientation is within 0.5° of the basal plane. Evidence is available that there is a one-to-one correspondence between etch figures and dislocations. Crystals with densities as high as 10^7 dislocations per cm^2 have been successfully etched.
Additional Information
© 1974 Elsevier Sequoia S.A., Lausanne. Received February 1, 1973. The work reported herein was sponsored by the U.S. Atomic Energy Commission and the California Institute of Technology. We wish to express our appreciation to Mr. Alvin Illig for his careful attention in the preparation of specimens used in this study and for his assistance with the photographic work. J. Wayne Miller wishes to express his thanks for fellowship support granted by the Department of Health, Education and Welfare under the National Defense Education Act. CALT-767-P3-13.Attached Files
Submitted - Observations_of_Dislocations_in_Zinc_by_Chemical_Etching_CALT-767-P3-13.pdf
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Observations_of_Dislocations_in_Zinc_by_Chemical_Etching_CALT-767-P3-13.pdf
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Additional details
- Eprint ID
- 53920
- DOI
- 10.1016/0025-5416(74)90180-3
- Resolver ID
- CaltechAUTHORS:20150121-082335770
- Atomic Energy Commission
- Caltech
- Department of Health, Education and Welfare
- Created
-
2015-01-21Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Other Numbering System Name
- CALT
- Other Numbering System Identifier
- 767-P3-13