Published August 1966
| Published
Journal Article
Open
5C3 - GaAs as an electrooptic modulator at 10.6 microns
- Creators
- Yariv, A.
-
Mead, C. A.
- Parker, J. V.
Abstract
The electrooptic properties of a number of semi-conductors were investigated. Of particular interest was the possibility of using these materials for modulation o infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a CO_2, 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at λ > 10μ.
Additional Information
© 1966 IEEE. Manuscript received May 5, 1966. This work was supported by the U. S. Air Force Systems Engineering Group under Contract AF33(615)-2800, and by the Office of Naval Research under Contract Nonr 220(50). This paper was presented at the 1966 International Quantum Electronics Conference, Phoenix, Ariz.Attached Files
Published - 01074037.pdf
Files
01074037.pdf
Files
(388.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:cd1bd412fa0de6c4db8abf0e78b1fa35
|
388.3 kB | Preview Download |
Additional details
- Eprint ID
- 53704
- Resolver ID
- CaltechAUTHORS:20150114-105353734
- AF33(615)-2800
- U. S. Air Force Systems Engineering Group
- Nonr 220(50)
- Office of Naval Research (ONR)
- Created
-
2015-01-14Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field