A High Resolution CMOS Imager With Active Pixel Using Capacitively Coupled Bipolar Operation

Abstract

The active pixel sensor technology promises high performance than conventional CCD imagers. This paper reports a new high resolution CMOS imager with one transistor active pixel sensing based on capacitor-coupled bipolar action. The base capacitor is pulsed negatively for image integration and positively for image sensing. The pixel size is 5.9um x 5.9um (on 0.8um design rule). The prototype imager has an array of 480 x 640 and operating at 5v Vcc. This active pixel structure is promising for future high-performance and high-density imagers in the information highway era.

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