Simulation of a long term memory device with a full bandstructure Monte Carlo approach
Abstract
Simulations of charging characteristics of a long term memory device, based on a floating gate structure, are presented. The analysis requires the inclusion of hot electron effects and a detailed account of the semiconductor bandstructure, because device operation is based on the injection of electrons into the gate oxide high above the silicon conduction band edge. We have developed a Monte Carlo simulator based on a full bandstructure approach which accurately accounts for the high energy tail of the electron distribution function. For practical simulation of the prototype structure, with 3.0-pm source-drain separation, the simulator is used as a post-processor on the potential profile obtained from a PISCES IIB drift-diffusion solution. The computations are in quantitative agreement with experimental results for the gate injection current, measured at fixed drain and gate biases.
Additional Information
© 1995 IEEE. Manuscript received January 31, 1995; revised April 26, 1995. This work was supported by the Joint Services Electronics Program, Grant N00014-90-J-1270. IEEE Log Number 9413026.Attached Files
Published - 00400738.pdf
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Additional details
- Eprint ID
- 53593
- Resolver ID
- CaltechAUTHORS:20150112-160605437
- Office of Naval Research (ONR)
- N00014-90-J-1270
- Joint Services Electronics Program
- Created
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2015-01-13Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field