Published November 1993
| Published
Journal Article
Open
White noise in MOS transistors and resistors
Abstract
The theoretical and experimental results for white noise in the low-power subthreshold region of operation of an MOS transistor are discussed. It is shown that the measurements are consistent with the theoretical predictions. Measurements of noise in photoreceptors-circuits containing a photodiode and an MOS transistor-that are consistent with theory are reported. The photoreceptor noise measurements illustrate the intimate connection of the equipartition theorem of statistical mechanics with noise calculations.
Additional Information
© Copyright 1993 IEEE. This work was supported by grants from the Office of Naval Research and the California Competitive Technologies Program. Chip fabrication was provided by MOSIS. We thank Dr. Michael Godfrey for his helpful suggestions regarding this manuscript.Attached Files
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Additional details
- Eprint ID
- 53119
- Resolver ID
- CaltechAUTHORS:20141222-153004031
- Office of Naval Research (ONR)
- California Office of Competitive Technology
- Created
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2014-12-23Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field