Currents through thin films of aluminum nitride
- Creators
- Lewicki, G.
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Mead, C. A.
Abstract
The current-voltage characteristics of thin film structures consisting of two metal electrodes separated by a thin insulating layer of AlN were measured as a function of insulator thickness. In thinner structures, the dependence of the current on voltage and insulator thickness was that expected from direct electron tunneling through a trapezoidal barrier. The characteristics were used to determine the barrier energies at the metal insulator interfaces and the energy-momentum relationship over a considerable portion of the AlN forbidden energy gap. In structures with thicker insulating regions, temperature-independent currents were observed which because of their dependence on voltage and insulator thickness could not be attributed to direct electron tunneling.
Additional Information
Copyright © 1968 Pergamon Press. Received 20 November 1967.Additional details
- Eprint ID
- 52981
- DOI
- 10.1016/0022-3697(68)90218-7
- Resolver ID
- CaltechAUTHORS:20141217-150418676
- Created
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2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field