Published October 1968 | public
Journal Article

Surface barriers on layer semiconductors: GaSe

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Abstract

Metallic surface barriers formed on the layer compound GaSe are studied by the photoresponse technique. The dependence of barrier potential vs. etectronegativity of the deposited metal is found to be linear with slope ≅ 0.6.

Additional Information

Copyright © 1968 Pergamon Press. Received 29 January 1968; in revised form 11 March 1968. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.

Additional details

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August 19, 2023
Modified:
March 5, 2024