Published October 1968
| public
Journal Article
Surface barriers on layer semiconductors: GaSe
- Creators
- Kurtin, Stephen
-
Mead, C. A.
Chicago
Abstract
Metallic surface barriers formed on the layer compound GaSe are studied by the photoresponse technique. The dependence of barrier potential vs. etectronegativity of the deposited metal is found to be linear with slope ≅ 0.6.
Additional Information
Copyright © 1968 Pergamon Press. Received 29 January 1968; in revised form 11 March 1968. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.Additional details
- Eprint ID
- 52980
- DOI
- 10.1016/0022-3697(68)90170-4
- Resolver ID
- CaltechAUTHORS:20141217-150028682
- Office of Naval Research (ONR)
- JPL
- Created
-
2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field