Electronic Processes in α-Sulfur
- Creators
- Thornber, K. K.
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Mead, C. A.
Abstract
The mobilities of photo-generated electrons and holes in orthorhombic sulfur are determined by drift mobility techniques. At room temperature electron mobilities between 0.4 cm^2/V-sec and 4.8 xm^2/V-sec and hole mobilities of about 5.0 cm^2/V-sec are reported. The temperature dependence of the electron mobility is attributed to a level of traps whose effective depth is about 0.12 eV. This value is further supported by both the voltage dependence of the space-charge-limited, d.c. photocurrents and the photocurrent versus photon energy measurements. As the field is increased from 10kV/cm to 30kV/cm a second mechanism for electron transport becomes appreciable and eventually dominates. Evidence that this is due to impurity band conduction at an appreciably lower mobility (4.10^(-4) cm^2/V-sec) is presented. No low mobility hole current could be detected for fields below 35 KV/cm. When fields exceeding 30 kV/cm for electron transport and 35 kV/cm for hole transport are applied, avalanche phenomena are observed. The results obtained are consistent with recent energy gap studies in sulfur. The theory of the transport of photo-generated carriers is modified to include the case of appreciable thermo-regeneration from the traps in one transit time.
Additional Information
Copyright © 1965 Pergamon Press. Received 2 March 1965. This work was supported in part by the Office of Naval Research under Contract N.R. Nonr-220(42) and the International Telephone and Telegraph Company.Additional details
- Eprint ID
- 52971
- DOI
- 10.1016/0022-3697(65)90047-8
- Resolver ID
- CaltechAUTHORS:20141217-135230195
- Office of Naval Research (ONR)
- Nonr-220(42)
- International Telephone and Telegraph Company
- Created
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2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field