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Published February 15, 1966 | Published
Journal Article Open

Voltage Dependence of Barrier Height in AIN Tunnel Junctions

Abstract

We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of applied voltage and insulator thickness. These results are in disagreement with currently accepted theories based upon image potential and/or field penetration of the electrodes.

Additional Information

© 1966 The American Institute of Physics. Received 4 November 1965; in final form 20 January 1966.

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