Surface barrier energies on strontium titanate

Abstract

The metal-semiconductor surface-barrier systems consisting of the metals gold, palladium, copper, or indium on chemically prepared or cleaved strontium titanate surfaces have been investigated in detail. Surface-barrier energies have been studied by photoresponse, forward current versus voltage, and thermal activation energy techniques yielding values in excellent agreement with each other. Forward current-voltage characteristics ~ere in quantitative agreement with simple diode thermionic theory as modified by the inclusion of image force lowering. The reverse current-voltage characteristic of these stable barriers also is in agreement with that expected from thermionic theory including simple image force lowering over a bias range from -0.1 to -4 V.

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